BORDER TRAPS IN NANOSCALE MOSFET GATE DIELECTRIC
نویسندگان
چکیده
منابع مشابه
Influence of High-k Gate Dielectric on Nanoscale DG-MOSFET
Influence of dielectric materials as gate oxide on various short channel device parameters using a 2-D device simulator has been studied in this paper. It is found that the use of high-k dielectrics directly on the silicon wafer would degrade the performance. This degradation is mainly due to the fringing field effect developed from gate to source/drain. This fringing field will further generat...
متن کاملCompact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET
A quantum mechanical modeling framework for ultrathin body (UTB) device operating in the subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body electrodes. Hence, the charge is neglected in Poisson equation, thus decoupling the quantum effects and electrostatics in the body. T...
متن کاملDual Material Gate Nanoscale SON MOSFET: For Better Performance
A simple analytical model of a nanoscale fully depleted dualmaterial gate (DMG) SOI and SON MOSFETs has been developed and their performance comparison analysis is presented in this paper. An analytical model for the surface potential and threshold voltage has been developed both for these structures using a generalized 2D Poisson’s equation solution. The DMG SON MOSFET technology is found to h...
متن کاملA Compact Scattering Model for the Nanoscale Double-Gate MOSFET
An analytically compact model for the nano-scale double gate MOSFET based on McKelvey’s flux theory is developed. The model is continuous above and below threshold and from the linear to saturation regions. Most importantly, it describes nano-scale MOSFETs from the diffusive to ballistic regimes. In addition to its use in exploring the limits and circuit applications of double gate MOSFETs, the...
متن کاملMulti-gate Mosfet Structures with High-k Dielectric Materials
Multi-gate MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high K dielectric materials as oxide layer at different places in MOSFET structures. One of the most impor...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: V mire nauchnykh otkrytiy
سال: 2014
ISSN: 2307-9428,2072-0831
DOI: 10.12731/wsd-2014-10-5